advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 150v lower on-resistance r ds(on) 70m fast switching characteristic i d 4a halogen free & rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =100 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance junction-ambient 3 50 /w data and specifications subject to change without n otice halogen-free product 1 ap20t15gm-hf 201311111 parameter rating drain-source voltage 150 gate-source voltage + 20 drain current 3 , v gs @ 10v 4 drain current 3 , v gs @ 10v 2.5 pulsed drain current 1 16 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s s s s g d d d d so-8 ap20t15 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial-ind ustrial surface mount applications using infrared reflow techniqu e and suited for voltage conversion or switch application s.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 150 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =4a - - 70 m v gs =4.5v, i d =2a - - 120 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =4a - 11 - s i dss drain-source leakage current v ds =120v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =4a - 26 42 nc q gs gate-source charge v ds =120v - 6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 16 - nc t d(on) turn-on delay time v ds =75v - 12 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 - 41 - ns t f fall time v gs =10v - 20 - ns c iss input capacitance v gs =0v - 1930 3080 pf c oss output capacitance v ds =25v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 105 - pf r g gate resistance f=1.0mhz - 1.8 3.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.9a, v gs =0v - - 1.3 v t rr reverse recovery time i s =4a, v gs =0v - 37 - ns q rr reverse recovery charge di/dt=100a/s - 65 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap20t15gm-hf 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad.
ap20t15gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g =4.0v t a =25 o c 8.0v 0 4 8 12 16 20 0 2 4 6 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.8 1.6 2.4 3.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 4 a v g =10v 50 60 70 80 90 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =2a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap20t15gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. ambient fig 12. gate charge waveform temperature 4 q v g 4.5v q gs q gd q g charge 0 400 800 1200 1600 2000 2400 2800 1 51 101 151 201 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 0 9 18 27 36 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =120v 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 10us 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 125 /w t t 0.02 operation in this area limited by r ds(on) 0 1 2 3 4 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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